| PART |
Description |
Maker |
| HYS64T256020HU-3.7-A HYS64T256020HU-5-A HYS72T2560 |
256MB - 2GB, 240pin
|
Infineon
|
| M393B1K73DH0 M393B2K70DM0 |
240pin Registered DIMM
240pin Registered DIMM based on 2Gb D-die
|
Samsung semiconductor
|
| M393B1K73CH0 |
240pin Registered DIMM based on 2Gb C-die
|
Samsung semiconductor
|
| HYS72T256000HR-3.7-A |
256MB - 4GB, 240pin
|
Infineon
|
| HYS72T128000HR-3.7-A HYS72T128000HR-5-A HYS72T1280 |
256MB - 4GB, 240pin
|
Infineon
|
| HYS64T128021HDL-3.7-A HYS64T32000HDL-3.7-A HYS64T6 |
256MB - 2GB, 200pin
|
Infineon
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| HMT125R7BFR4A-G7 HMT125R7BFR4A-H9 HMT125R7BFR8A-G7 |
240pin DDR3L SDRAM Registered DIMM
|
Hynix Semiconductor
|
